Conference Publications and Presentations
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1986
R.M. Warner, Jr. and R.D. Schrimpf,
"BJT-MOSFET Transconductance Comparisons," in Proc. IEEE Bipolar
Circuits and Technology Meeting, 1986, pp. 71-72.
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1989
P.J. Wahle, R.D. Schrimpf, and K.F. Galloway,
"Simulated Space Radiation Effects on Power MOSFETs in Switching Power
Supplies," in Conf. Record of the IEEE Industry Applications Society
Meeting, 1989, pp. 1221-1226.
M.J. Martinez, J.P. Retzler, S.L. Rainwater,
R.D. Schrimpf, and K.F. Galloway, "Hardness Enhancement for Power
DMOS,"
in Government Microcircuit Applications Conference Digest of Papers,
1989, pp. 385-387.
R.D. Schrimpf, P.W.C. Hsueh, H. Lendenmann,
and J.N. Fordemwalt, "Electrostatic-Discharge Detectors," in 1989
EOS/ESD Symp. Proc., 1989, pp. 84-87.
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1990
H. Lendenmann, R.D. Schrimpf, and A.D.
Bridges, "Novel Test Structure for the Measurement of
Electrostatic-Discharge Pulses," in Proc. IEEE Int. Conf. on
Microelectronic Test Structures, 1990, pp. 149-153.
N.V. Barbara, R.D. Schrimpf, and W.J. Kerwin,
"Ionizing-Radiation-Induced Degradation in Electronic Power
Amplifiers,"
in Conf. Record of the IEEE Industry Applications Society Meeting,
1990, pp. 1667-1672.
W. Weber, R.D. Schrimpf, R.G. Myers, A.F.
Witulski, and K.F. Galloway, "Radiation-Induced Changes in Power-MOSFET
Gate-Charge Measurements," in Conf. Record of the IEEE Industry
Applications Society Meeting, 1990, pp. 1673-1678.
J. Schmid, R. Craigin, C. Damianou, J. Hohl,
R. Schrimpf, H. Parks, J. Ramberg, N. Brown, and R. Jones, "A Simple
Model for Estimating Allowable Transition Metal Contamination Levels in
DRAMs," in Proc. SRC Techcon, 1990, pp. 263-266.
R.D. Schrimpf, S.C. Lee, K.F. Galloway, S.L.
Rainwater, and J.P. Retzler, "Circumvention-Hardened Field-Effect
Transistors," in Government Microcircuit Applications Conference Digest
of Papers, 1990, pp. 439-442.
S.L. Kosier, D. Zupac, R.D. Schrimpf, F.E.
Cellier, K.F. Galloway, M.N. Darwish, C.A. Goodwin, and M.C. Dolly,
"Optimization of a Two-Level Field-Plate Termination Structure for
Integrated-Power Applications in Ionizing Radiation Environments," in
Government Microcircuit Applications Conference Digest of Papers,
1990, pp. 435-438.
D. Zupac, K.W. Baum, W. Weber, R.D. Schrimpf,
and K.F. Galloway, "ESD Effects on the Radiation Response of Power
VDMOS
Transistors," in EOS/ESD Symposium Proc., 1990, pp. 137-142.
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1991
R. Craigin, J. Schmid, C. Damianou, J. Hohl,
R. Schrimpf, H. Parks, J. Ramberg, N. Brown, and R. Jones,
"Electrically
Monitoring Chemical Contamination," in Proc. Sixth Symp. on Automated
Integrated Circuits Manufacturing, V. E. Akins and H. Harada, Eds.,
Pennington, NJ: The Electrochemical Society, 1991, pp. 317-328.
R.N. Nowlin, R.D. Schrimpf, E.W. Enlow, W.E.
Combs, and R.L. Pease, "Mechanisms of Ionizing-Radiation-Induced Gain
Degradation in Modern Bipolar Devices," in Proc. 1991 IEEE Bipolar
Circuits and Tech. Mtg., 1991, pp. 174-177.
D. Zupac, K.F. Galloway, and R.D. Schrimpf,
"Gamma-Radiation-Induced Inversion-Layer Hole Mobility Degradation in
P-Channel Power MOSFETs at 300 K and 77 K," in RADECS (Radiation
Effects on Components and Systems) 91 Proc., 1991, pp. 121-127.
D. Zupac, K.W. Baum, R.D. Schrimpf, and K.F.
Galloway, "Detection of ESD-Induced Noncatastrophic Damage in P-Channel
Power MOSFETs," in EOS/ESD Symp. Proc., 1991, pp. 151-157.
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1992
D. Zupac, D. Pote, R.D. Schrimpf, and K.F.
Galloway, "Annealing of ESD-Induced Damage in Power MOSFETs," in Proc.
EOS/ESD Symp., 1992, pp. 121-128.
G. Teowee, J.M. Boulton, E.A. Kneer, M.N. Orr,
D.P. Birnie III, D.R. Uhlmann, S.C. Lee, K.F. Galloway, and R.D.
Schrimpf, "Effect of Zr/Ti Stoichiometry Ratio on the Ferroelectric
Properties of Sol-Gel Derived PZT Films," in Proc. 8th Int. Symp. on
the Appl. of Ferroelectrics, 1992, pp. 41-44.
S.C. Lee, G. Teowee, R.D. Schrimpf, D.P.
Birnie III, D.R. Uhlmann, and K.F. Galloway, "Fatigue Effect on the I-V
Characteristics of Sol-Gel Derived PZT Thin Films," in Proc. 8th Int.
Symp. on the Appl. of Ferroelectrics, 1992, pp. 77-80.
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1993
S.L. Kosier, R.D. Schrimpf, A. Wei, M. DeLaus,
D.M. Fleetwood, and W.E. Combs, "Effects of Oxide Charge and Surface
Recombination Velocity on the Excess Base Current of BJTs," in Proc.
IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 211-214, 1993.
G.H. Johnson, J.R. Brews, R.D. Schrimpf, and
K.F. Galloway, "Analysis of the Time-Dependent Turn-On Mechanism for
Single-Event Burnout of N-Channel Power MOSFETs," in RADECS 93 Proc.,
pp. 441-445, 1993.
P. Khosropour, K.F. Galloway, D. Zupac, R.D.
Schrimpf, and P. Calvel, "Application of Test Method 1019.4 to
Non-Hardened Power MOSFETs," in RADECS 93 Proc., pp. 300-305, 1993.
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1994
A. Wei, S.L. Kosier, R.D. Schrimpf, W.E.
Combs, and M. DeLaus, "Excess Collector Current Due to an
Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs," in Proc.
IEEE Bipolar/BiCMOS Circuits and Tech. Mtg., pp. 201-204, 1994.
S.L. Kosier, M. DeLaus, A. Wei, R.D. Schrimpf,
and A. Martinez, "Simple Technique for Improving the Hot-Carrier
Reliability of Single-Poly Bipolar Transistors," in Proc. IEEE
Bipolar/BiCMOS Circuits and Tech. Mtg., pp. 205-208, 1994.
J.R. Schmid, H.G. Parks, R. Craigin, and R.D.
Schrimpf, "Estimating the Effect of Contamination-Induced Leakage
Current in View of DRAM Architectural Trends," in Proc. Advanced
Semiconductor Manufacturing Conference and Workshop, p. 96, 1994.
H.G. Parks, S.L. Kosier, R.D. Schrimpf, W.B.
Henley, and L. Jastrzebski, "First Order Specification of Liquid
Chemical Purity Requirements Based on Contaminant Deposition and
Advanced DRAM Architecture," in Proc. Microcontamination '94, p. 132,
1994.
H.G. Parks and R.D. Schrimpf, "Metal
Deposition, Metrology, and Device Degradation from Contamination in
Semiconductor Processing Fluids," in Proc. 40th Ann. Tech. Mtg. IES
(Invited), p. 338, 1994.
R.J. Graves, D.M. Schmidt, S.L. Kosier, A.
Wei, R.D. Schrimpf, and K.F. Galloway, "Visualization of
Ionizing-Radiation and Hot-Carrier Stress Response of Polysilicon
Emitter BJTs," in IEDM Tech. Dig., pp. 233-236, 1994.
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1995
F.K. Chai, R.D. Schrimpf, J.R. Brews, D.P.
Birnie, III, K.F. Galloway, R.N. Vogt, and M.N. Orr, "Effects of
Scaling
Thickness and Niobium Doping Level on Ferroelectric Thin Film Capacitor
Memory Operation," in IEDM Tech. Dig., pp. 123-126, 1995.
I. Mouret, M.-C. Calvet, P. Calvel, P. Tastet,
M. Allenspach, K. A. LaBel, J. L. Titus, C. F. Wheatley, R. D.
Schrimpf,
and K. F. Galloway, "Experimental Evidence of the Temperature and
Angular Dependence in SEGR," in RADECS 95 Proc., pp. 313-320, 1995.
R. D. Schrimpf, "Recent Advances in
Understanding Total-Dose Effects in Bipolar Transistors," in RADECS 95
Proc. (Invited), pp. 9-18, 1995.
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1996
H.G. Parks, R.D. Schrimpf, and K.F. Galloway,
"Contamination TCAD: A Tool Needed for Efficient Process Development,"
in Digest of Papers 1996 GOMAC Conference, pp. 287-290, 1996.
K.F. Galloway, G.H. Johnson, and R.D.
Schrimpf, "Present Status of Power MOSFET Single Event Phenomena: A
Review," in Proc. 2nd Int. Workshop on Radiation Effects of
Semiconductor Devices for Space Applications (Invited), pp. 88-98, 1996.
M. Allenspach, J. R. Brews, K. F. Galloway, G.
H. Johnson, R. D. Schrimpf, R. L. Pease, J. L. Titus, and C. F.
Wheatley, "SEGR: A Unique Failure Mode for Power MOSFETs in
Spacecraft," in Proc. of the 7th European Symposium on Reliability of
Electron Devices, Failure Physics, and Analysis, 1996.
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1997
J. Y. Ahn, W. T. Holman, R. D. Schrimpf, K. F.
Galloway, D. A. Bryant, P. Calvel, and M.-C. Calvet, "Design Issues for
a Radiation-Tolerant Digital to-Analog Converter in a Commercial
2.0-µm BiCMOS Process," in RADECS Proc., pp. 120-125, 1997.
X. Montagner, R. Briand, P. Fouillat, R. D.
Schrimpf, A. Touboul, K. F. Galloway, M. C. Calvet, and P. Calvel,
"Dose-Rate and Irradiation Temperature Dependence of BJT SPICE Model
Rad-Parameters," in RADECS Proc., pp. 216-222, 1997.
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1998
R. Milanowski, L. Massengill, R. Schrimpf, R.
Graves, H. Barnaby, K. Galloway, M. Pagey, C. Nicklaw, and J. Johann,
"Radiation Hardened Semiconductor Technology Computer Aided Design," in
GOMAC Dig., pp. 573-577, 1998.
R. Milanowski, L. Massengill, R. Schrimpf, M.
Pagey, and C. Nicklaw, "Computational Split-Lot Study of the Effect of
Implant Parameters on Total-Dose-Induced Leakage," in GOMAC Dig., pp.
582-584, 1998.
H. J. Barnaby, R. J. Milanowski, R. D.
Schrimpf, L. W. Massengill, and M. Pagey, "Modeling Ionizing Radiation
Effects in Lateral PNP BJTs with Non Uniform Trapped Charge
Distributions," in GOMAC Dig., pp. 585-588, 1998.
H. J. Barnaby, R. D. Schrimpf, D. M.
Fleetwood, and S. L. Kosier, "The Effects of Emitter-Tied Field Plates
on Lateral PNP Ionizing Radiation Response," in IEEE BCTM Proc., pp.
35-38, 1998.
F. Saigné, P. Adell, Y. Zhao, R. D.
Schrimpf, K. F. Galloway, L. Dusseau, J. Fesquet, and J. Gasiot,
"Utilisation des Recuits Isochrones pour la Mise en Evidence de
Défauts Créés par une Irradiation aux Protons sur
un Détecteur Optique Silicium du Commerce," in OPTORAD 98,
Session 1: Detectors, 1998.
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1999
H. J. Barnaby, C. Cirba, R. D. Schrimpf, S.
Kosier, P. Fouillat, and X. Montagner, "Modeling BJT Radiation Response
with Non-Uniform Energy Distributions of Interface Traps," in RADECS
Proc., pp. 75-79, 1999.
P. E. Bunson, R. D. Schrimpf, M. Di Ventra,
and S. T. Pantelides, "Diffusion of H in SiO 2: An Ab-Initio
Study," presented at APS March Meeting, 1999.
J. Hofmeister, H. G. Parks, B. Vermeire, Z.
Murshalin, R. Graves, R. D. Schrimpf, and K. F. Galloway, "Concept and
Initial Feasibility of Contamination TCAD by Integration with
Commercial Software," in Proc. 10th Annual IEEE/SEMI Advanced
Semiconductor Manufacturing Conference, pp. 426-429, 1999.
J. Liu, R. D. Schrimpf, L. Massengill, K. F.
Galloway, and J. O. Attia, "Circuit-Level Model for Single-Event
Burnout
in N-Channel Power MOSFETs," in RADECS Proc., pp. 173-179, 1999.
R. Milanowski, M. Pagey, J. Conley, L.
Massengill, R. Schrimpf, and K. Galloway, "Total Dose Radiation-Effects
Simulation Using Three-Carrier Transport in SiO2," in GOMAC
Digest, pp. 758-761, 1999.
S. K. Mukundan, M. P. Pagey, R. D. Schrimpf,
and K. F. Galloway, "Simulation of hot-carrier degradation using
self-consistent solution of semiconductor energy-balance equations and
oxide carrier transport equations," in Integrated Reliability Workshop
Final Report, pp. 92-97, 1999.
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2000
H. J. Barnaby, C. Cirba, R. D. Schrimpf, K. F. Galloway, M. Pagey,
and R. Milanowski, "A Two Dimensional Engineering Model for
Radiation-Induced Interface Trap Formation," in GOMAC Digest,
pp.
613-616, 2000.
D. G. Walker, J. Liu, T. S. Fisher, and R. D. Schrimpf,
"Thermal Characterization of Single Event Burnout Failure in
Semiconductor Power Devices," in Proc. 16th Annual IEEE Semiconductor
Thermal Measurement and Management Symposium (SEMITHERM), pp. 213-219,
2000.
D. M. Fleetwood, R. D. Schrimpf, L. W. Massengill, and K. F.
Galloway, "Challenges in Modeling of Radiation Effects on
Microelectronics," presented at Predictive Process Simulation
Conference, 2000.
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2001
R. D. Schrimpf, "From Defects to Devices: Radiation Effects in
Electronics," in GOMAC Digest, pp. 137-140, 2001. (invited)
A. L. Sternberg, L. W. Massengill, R. D. Schrimpf, Y. Boulghassoul,
H.J. Barnaby, S. Buchner, R. L. Pease, and J. W. Howard, "Effect of
Amplifier Parameters on Single-Event Transients in an Inverting
Operational Amplifier," in RADECS Proc., pp. 398-404, 2001.
J. Boch, F. Saigné, T. Maurel, F. Giustino, L. Dusseau, R. D.
Schrimpf, K.F. Galloway, J. P. David, R. Ecoffet, J. Fesquet, and J.
Gasiot, "Dose and Dose Rate Effects on NPN Bipolar Junction Transistors
Irradiated at High Temperature," in RADECS Proc., pp. 357-362, 2001.
Y. Deval, H. Lapuyade, P. Fouillat, H. Barnaby, F. Darracq, R.
Briand, D. Lewis, and R. D. Schrimpf, "Evaluation of a design
methodology dedicated to dose rate hardened linear integrated
circuits,"
in RADECS Proc., pp. 237-242, 2001.
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2002
C. R. Cirba, H. J. Barnaby, J. M. Hutson, J. A. Felix, R. D. Schrimpf,
and D. M. Fleetwood, "Modeling Oxide Trapped Charge Annealing Processes
In Irradiated SOI MOSFETs," in GOMAC Dig., pp. 496-499, 2002.
D. R. Ball, H. J. Barnaby, and R. D. Schrimpf, "Analysis of Proton
Radiation Damage in Bipolar Transistors Using Gate Control," in GOMAC
Dig., pp. 500-503, 2002.
H. J. Barnaby, R. D. Schrimpf, K. F. Galloway, D. R. Ball, R. L. Pease,
and P. Fouillat, "Test Structures for Analyzing Radiation Effects in
Bipolar Technologies," in Proc. Int. Conf. Microelectronic Test
Structures, pp. 197-201, 2002.
R. D. Schrimpf, D. M. Fleetwood, and S. T. Pantelides, "A
Multi-Disciplinary Approach to Modeling & Testing Microelectronic
Materials & Devices," Invited Talk, National Space and Missiles
Materials Symposium, Colorado Springs, CO, June 24-27, 2002.
R. D. Schrimpf, "Radiation-Induced Degradation of Bipolar Transistors
and Linear Integrated Circuits," Invited Talk, RADECS Workshop, Padova,
Italy, September 19-20, 2002.
X. Hu, B. K. Choi, H. J. Barnaby, D. M. Fleetwood, R. D. Schrimpf, S.
C. Lee, S. Shojah-Ardalan, R. Wilkins, U. K. Mishra, and R. Dettmer,
"The Energy Dependence of Proton-Induced Degradation in AlGaN/GaN High
Electron Mobility Transistors," in RADECS2002 Workshop Proc., pp.
17-20, 2002.
D. M. Fleetwood, S. N. Rashkeev, S. T. Pantelides, and R. D. Schrimpf,
"Effects of hydrogen transport and reactions on microelectronics
radiation response and reliability," European Symposium on the
Reliability of Electron Devices, Failure Physics and Analysis, Rimini,
Italy, Oct. 7-11, 2002.
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2003
C. R. Cirba, S. Cristoloveanu, R. D. Schrimpf, L. C. Feldman, D. M.
Fleetwood, and K. F. Galloway, "Radiation Hardness of Double-Gate
Ultra-Thin SOI MOSFETs," in PV 2003-05 Silicon-on-Insulator Technology
and Devices XI, S. Cristoloveanu, G. K. Celler, J. G. F. Gamiz, K.
Izumi, and Y. W. Kim, Eds. Pennington, NJ: The Electrochemical Society,
2003, pp. 493-498.
D. M. Fleetwood, S. N. Rashkeev, Z. Y. Lu, C. J. Nicklaw, J. A. Felix,
R. D. Schrimpf, and S. T. Pantelides, "Dipoles in SiO2:
Border Traps or Not?," in PV 2003-02 Silicon Nitride and Silicon
Dioxide
Thin Insulating Films (7th), R. E. Sah, K. B. Sunda, J. Deen, D.
Landheer, W. D. Brown, and D. Misra, Eds. Pennington, NJ: The
Electrochemical Society, 2003, pp. 291-307.
L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Field-Induced Reactions of Water Molecules at
Si-Dielectric
Interfaces," in MRS Proc. 786, pp. E3.3, 2003.
R. D. Schrimpf, C. R. Cirba, J. A. Felix, D. M. Fleetwood, S.
Cristoloveanu, and K. F. Galloway, "Space Radiation Effects in Advanced
SOI Devices and Alternative Gate Dielectrics," presented at Frontiers
in
Microelectronics, Corsica, France, June 23-27, 2003. (invited)
J. A. Felix, M. R. Shaneyfelt, D. M. Fleetwood, E. P. Gusev, R. D.
Schrimpf, and C. D’Emic, "The Effects of Interfacial Layer Thickness
and
Processing on the Radiation Response of High-K/SiOxNy/Si
(100) Gate Dielectric Stacks," presented at IEEE Semiconductor
Interface Specialists Conference, Washington, DC, Dec. 4-6, 2003.
R. Pasternak, Y. V. Shirokaya, Z. Marka, J. K. Miller, S. N. Rashkeev,
S. T. Pantelides, N. H. Tolk, B. K. Choi, D. M. Fleetwood, and R. D.
Schrimpf, "Contactless Characterization of Carrier Injection and
Recombination Processes at Semiconductor Interfaces Using
Second-Harmonic Generation," presented at March Meeting of The American
Physical Society, Austin, TX, March 3-7, 2003.
J. A. Felix, J. R. Schwank, C. R. Cirba, R. D. Schrimpf, M. R.
Shaneyfelt, D. M. Fleetwood, and P. E. Dodd, "Influence of Total-Dose
Radiation on the Electrical Characteristics of SOI MOSFETs," presented
at Insulating Films on Silicon Conference, Barcelona, Spain, June
18-20,
2003. (invited)
B. K. Choi, W. P. Kang, J. L. Davidson, M. Howell, R. D. Schrimpf, and
D. M. Fleetwood, "CVD Diamond Photoconductive Devices," presented at
DIAMOND 2003, 14th European Conference on Diamond, Diamond-like
Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Salzburg,
Austria, September 7-12, 2003.
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2004
R. A. Weller, R. D. Schrimpf, R. A. Reed, A. L. Sternberg, A. S.
Kobayashi, M. H. Mendenhall, L. W. Massengill, and D. M. Fleetwood,
"Modeling Semiconductor Device Response Using Detailed Radiation Event
Simulations," presented at Hardened Electronics and Radiation
Technology Conference, Monterey, CA, March 2-5, 2004.
L. Tsetseris, X. Zhou, D. M. Fleetwood, R. D. Schrimpf, and S. T.
Pantelides, "Hole-Controlled Defect Formation at Si-SiO2
Interfaces in the Presence of Water and Fluorine-Related Species,"
presented at March Meeting of The American
Physical Society, Montreal, Quebec, CA, March 22-26, 2004.
R. D. Schrimpf, R. A. Weller, D. M. Fleetwood, and S. T. Pantelides,
"Physically-Based Radiation-Effects Models: Application to Design
Hardening," presented at European Workshop on Radiation Hardened
Electronics, Villard de Lans, France, 30 March-1 April, 2004. (invited)
M. J. Gadlage, R. D. Schrimpf, J. M. Benedetto, P. H. Eaton, and T. L.
Turflinger, "Modeling and Verification of Single Event Transients in
Deep Submicron Technologies," in IEEE Int. Reliability Physics
Symposium
Proc., pp. 673-674, 2004.
X. J. Zhou, S. N. Rashkeev, L. Tsetseris, D. M. Fleetwood, R. D.
Schrimpf, S. T. Pantelides, J. A. Felix, E. P. Gusev, and C. D’Emic,
“Negative Bias-Temperature Instabilities in MOS Devices with SiO2
and SiOxNyHfO2 Gate Dielectrics,”
presented at Electronic Materials Conference, Notre Dame, IN, June
23-25, 2004.
S. T. Pantelides, T. Bakos, D. M. Fleetwood, Z. Lu, C. Nicklaw, S. N.
Rashkeev, and R. D. Schrimpf, "Point defects in amorphous versus
crystalline SiO2," presented at 3rd Int. conf. on
computational modeling and simulation of materials, Sicily, Italy, May,
2004. (invited)
F. Baronti, P. C. Adell, W. T. Holman, R. D. Schrimpf, L. W.
Massengill, A. Witulski, and M. Ceschia, "DC/DC Switching Power
Converter with Radiation Hardened Digital Control based on SRAM
FPGAs," presented at MAPLD Int. Conf., Washington, DC, September 8-10,
2004.
R. R. Cizmarik, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, D. G.
Platteter, M. R. Shaneyfelt, R. L. Pease, J. Boch, D. R. Ball, J. D.
Rowe, and M. C. Maher, “The impact of mechanical stress on the
total-dose response of linear bipolar transistors with various
passivation layers,” presented at RADECS2004 Workshop, Madrid, Spain,
Sept. 22-24, 2004.
D. Lunardini, B. Narasimham, V. Ramachandran, V. Srinivasan, R. D.
Schrimpf, and W. H. Robinson, "A Performance Comparison between
Hardened-by-Design and Conventional-Design Standard Cells," presented
at RADECS2004 Workshop, Madrid, Spain, Sept. 22-24, 2004.
S. T. Pantelides, R. Buczko, D. M. Fleetwood, S. J. Pennycook, S. N.
Rashkeev, R. D. Schrimpf, L. Tsetseris, and X. Zhou, "Atomic processes
at semiconductor-oxide interfaces in microelectronic devices,"
presented
at CECAM Workshop, Lyon, France, September, 2004. (invited)
R. D. Schrimpf, R. A. Weller, and R. A. Reed, "Physically Based
Simulation of Single-Event Effects in Advanced Technologies," in Proc.
6th Int. Workshop on Radiation Effects on Semiconductor Devices for
Space Application, pp. 99-104, Tsukuba, Japan, October 6-8, 2004.
(invited)
B. Jun, M. Fouillat, R. D. Schrimpf, D. M. Fleetwood, and S.
Cristoloveanu, “Total dose radiation effects in partially-depleted SOI
transistors with ultrathin gate oxide,” in Proc. IEEE SOI Conference,
Charleston SC, October 4-7, pp. 30-31, 2004.
S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z.
Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K.
Van Benthem, X. Zhang, and X. Zhou, "Atomic-scale challenges in
nano-MOSFETS: Gate dielectrics and device modeling," presented at 2nd
Int. Conf. on Microelectronics, Microstructures, and Nanotechnology,
Athens, Greece, November, 2004. (invited)
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2005
R. D. Schrimpf, "Radiation Effects in Microelectronics," presented at
School on the Effects of Radiation on Embedded Systems for Space
Applications (SERESSA), Manaus, Brazil, November 21-25, 2005 (invited).
K. Akarvardar, S. Cristoloveanu, B. Dufrene, P. Gentil, R. D. Schrimpf,
B. J. Blalock, J. A. Chroboczek, and M. M. Mojarradi, "Evidence for
reduction of noise and radiation effects in G4-FET depletion-all-around
operation," in Proc. 35th European Solid-State Device Research Conf.
(ESSDERC), 2005, pp. 89-92.
S. T. Pantelides, S. Wang. A. Franceschetti, R. Buczko, M. Di Ventra,
S. N. Rashkeev, L. Tsetseris, M. H. Evans, I. G. Batyrev, L. C.
Feldman, S. Dhar, K. McDonald, R. A. Weller, R. D. Schrimpf, D. M.
Fleetwood, X. J. Zhou, J. R. Williams, C. C. Tin, G. Y. Chung, T.
Isaacs-Smith, S. R. Wang, S. J. Pennycook, G. Duscher, K. van Benthem,
L. M. Porter, and J. A. Cooper, Jr., "Si/SiO2 and SiC/SiO2 interfaces
for MOSFETs - Challenges and Advances," International Conference on
Silicon Carbide and Related Materials 2005, Pittsburgh, PA, Sept.
18-23, 2005 (invited).
D. M. Fleetwood, X. J. Zhou, L. Tsetseris, S. T. Pantelides, and R. D.
Schrimpf, "Hydrogen model for negative-bias temperature instabilities
in MOS gate insulators," 8th International Symposium on Silicon Nitride
and Silicon Dioxide Thin Insulating Films and Other Emerging
Dielectrics, 207th Meeting of the Electrochemical Society, Quebec City,
QC, Canada, May 15-20, 2005 (invited).
S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z.
Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K.
Van Benthem, X. Zhang, X. Zhou, "Atomic-scale challenges in
nano-MOSFETs: Gate dielectrics and device modeling," European Materials
Research Society, Strasbourg, France, May 2005 (invited).
S. T. Pantelides, M. H. Evans, D. M. Fleetwood, J. D. Joannopoulos, Z.
Lu, R. D. Schrimpf, S. J. Pennycook, S. N. Rashkeev, L. Tsetseris, K.
Van Benthem, X. Zhang, X. Zhou, "Atomic-scale challenges in
nano-MOSFETs: Gate dielectrics and device modeling," American Physical
Society March Meeting, Los Angeles, CA, March 2005 (invited).
X. J. Zhou, D. M. Fleetwood, L. Tsetseris, R. D. Schrimpf, S. T.
Pantelides, J. A. Felix, E. P. Gusev, and C. D'Emic, "Effects of
irradiation and bias-temperature stress on charge trapping in HfO2 Gate
Dielectrics," IEEE Semiconductor Interface Specialists Conference,
Washington, DC, Dec. 1-3, 2005.
L. Tsetseris, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf and S. T.
Pantelides, "Physical mechanisms of negative-bias temperature
instability, MRS Spring Meeting, San Francisco, CA, March 28 - April 1,
2005.
M. L. Alles, D. R. Ball, L. W. Massengill, R. D. Schrimpf, K. A.
Warren, and R. A. Weller, "Considerations for Single Event Effects in
Non-Planar Multi-Gate SOI FETs," in Proc. IEEE SOI Conference, pp.
191-193 2005.
M. H. Evans, M. Caussanel, R. D. Schrimpf, and S. T. Pantelides,
"First-Principles Modeling of Double-Gate UTSOI MOSFETs," in IEEE Int.
Electron Devices Meeting Tech. Dig., pp. 611-614, 2005.
D. Ball, K. Warren, R. Weller, R. Reed, L. Massengill, R. Schrimpf, and
N. Haddad, "Simulating Nuclear Events in a TCAD Model of a High-Density
SEU Hardened SRAM Technology," presented at RADECS, Cap d'Agde, France,
September 19-23, 2005.
J. M. Hutson, R. D. Schrimpf, and L. M. Massengill, "The Effects
of Scaling and Well and Substrate Contact Placement on Single Event
Latchup in Bulk CMOS Technology," presented at RADECS, Cap d'Agde,
France, September 19-23, 2005.
M. Bernard, J. Boch, J.-R. Vaillé, F. Saigné, L. Dusseau, R. D.
Schrimpf, E. Lorfevre, and J. P. David, "Analysis of Total-Dose
Response of Bipolar Voltage Comparator Combining Experiments and Design
Data," presented at RADECS, Cap d'Agde, France, September 19-23, 2005.
A. Kelly, P. C. Adell, A. F. Witulski, W. T. Holman, and R. D.
Schrimpf, "Total Dose and Single Event Transients in Linear Voltage
Regulators," presented at RADECS, Cap d'Agde, France, September 19-23,
2005.
B. Narasimham, V. Ramachandran, B. L. Bhuva, R. D. Schrimpf, W. T.
Holman, L. W. Massengill, W. H. Robinson, A. F. Witulski, J. D. Black,
and D. McMorrow, "On-Chip Characterization of Single Event Transient
Pulse Widths," presented at IEEE Nuclear and Space Radiation Effects
Conference, Seattle, WA, July 11-15, 2005.
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2006
M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, N. H. Tolk, R. Pasternak,
and R. W. Standley, "Experimental Evaluation of Second Harmonic
Generation for Non-Invasive Contamination Detection in SOI Wafers," in
IEEE/SEMI Advanced Semiconductor Manufacturing Conference, Boston, MA,
2006, pp. 1-6.
K. Akarvardar, S. Chen, J. Vandersand, B. Blalock, R. Schrimpf, B.
Prothro, C. Britton, S. Cristoloveanu, P. Gentil, and M. M. Mojarradi,
"Four-Gate Transistor Voltage-Controlled Negative Differential
Resistance Device and Related Circuit Applications," in IEEE Int. SOI
Conference, 2006, pp. 71-72.
A. F. Witulski, A. Albadri, and R. D. Schrimpf, "Single-Event Effects
on Electronics in Space," in IEEE Power Electronics Society Newsletter.
vol. 18, 2006, pp. 14-16.
R. D. Schrimpf, R. A. Weller, M. H. Mendenhall, R. A. Reed, and L. W.
Massengill, "Physical Mechanisms of Single Event Effects in Advanced
Microelectronics," presented at Int. Conf. on the Applications of
Accelerators in Research & Industry, Fort Worth, TX, 2006.
R. A. Reed, J. A. Pellish, R. A. Weller, M. Porter, J. Wilkinson, K. M.
Warren, B. Sierawski, P. W. Marshall, and R. D. Schrimpf, "Applications
of Heavy Ion Microprobe for Single Event Effects Analysis," presented
at Int. Conf. on the Application of Accelerators in Research &
Industry, Fort Worth, TX, 2006.
R. D. Schrimpf, "Radiation Effects in Microelectronics," presented at
School on the Effects of Radiation on Embedded Systems for Space
Applications (SERESSA), Sevilla, Spain, November 27-30, 2006 (invited).
N. F. Haddad, T. Bach, T. Conway, D. Lawson, J. Ross, J. Rodgers, A.
Tipton, D. Ball, K. Warren, and R. Schrimpf, "Eliminating Low LET
Sensitivities in Deep Sub-Micrometer SRAM through Non-intrusive
Technology Features," presented at RADECS, Athens, Greece, 2006.
K. M. Warren, R. A. Weller, B. Sierawski, R. A. Reed, M. H. Mendenhall,
R. D. Schrimpf, L. W. Massengill, M. Porter, J. Wilkinson, K. A. LaBel,
and J. Adams, "Application of RADSAFE to Model Single Event Upset
Response of a 0.25 μm CMOS SRAM," presented at RADECS, Athens, Greece,
2006.
J. D. Black, B. L. Bhuva, M. L. Alles, L. W. Massengill, D. M.
Fleetwood, R. D. Schrimpf, and K. F. Galloway, "Static and Dynamic
Power Comparison of HBD Transistor-Based Circuits Designed in a
Commercial 130 nm Technology," presented at RADECS, Athens, Greece,
2006.
D. K. Chen, R. D. Schrimpf, D. M. Fleetwood, K. F. Galloway, A.
Dimoulas, A. Sotiropoulos, and Y. Panayiotatos, "Total Dose Response of
Ge MOS Capacitors with HfO2/Dy2O3 Gate
Stacks," presented at RADECS, Athens, Greece, 2006.
S. T. Pantelides, R. D. Schrimpf, D. M. Fleetwood, L. Tsetseris, S. N.
Rashkeev, and X. J. Zhou, "Atomic scale mechanisms for
radiation-induced phenomena in MOSFETs," presented at RADECS, Athens,
Greece, Sept. 27-29, 2006. (invited)
D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev,
S. Wang, R. D. Schrimpf, and S. T. Pantelides, "Effects of device aging
on microelectronics radiation response and reliability," presented at
25th International Conf. Microelectron. (MIEL 2006), Belgrade, Serbia
and Montenegro, May 14-17, 2006. (invited)
S. T. Pantelides, L. Tsetseris, S. N. Rashkeev, X. J. Zhou, D. M.
Fleetwood, and R. D. Schrimpf, "Hydrogen in MOSFETs: The Good, the Bad,
and the Ugly," presented at International Workshop on Modeling of
Reliability Issues, Vienna, Austria, May 2006. (invited)
R.A. Reed, R.A. Weller, R.D. Schrimpf, L.W. Massengill, M.H.
Mendenhall, B. Sierawski, K.M. Warren, D.R. Ball, M. Alles, A.
Sternberg, J.A. Pellish, C. Howe, "Applications of RADSAFE" Geant4
Space Users’ Meeting, SLAC, Palo Alto, CA, 11/Mar/2006.
R. A. Weller, M. H. Mendenhall, R. A. Reed, J. A. Pellish, B. D.
Sierawski, L. W. Massengill and R. D. Schrimpf, “mred8 – A Python
controlled Geant4 Application for Space Radiation Effects,” Geant4
Space Users’ Meeting, SLAC, Palo Alto, CA, 11/Mar/2006.
R.A. Reed, R.A. Weller, R.D. Schrimpf, L.W. Massengill, M.H.
Mendenhall, K.M. Warren, B. Sierawski, D.R. Ball, M. Alles, A.
Sternberg, J.A. Pellish, C. Howe, A. Tipton, K.A. LaBel, M. Xapsos,
“Applications of RADSAFE for Single Event Effect Analysis,” presented
at Geant4 Space Users Workshop, Pasadena, CA, 2006.
R.A. Weller, R. A. Reed, M. H. Mendenhall, K. M. Warren, D. R. Ball, J.
A. Pellish, B. D. Sierawski, C. L. Howe, A. D. Tipton, R. D. Schrimpf,
L. W. Massengill, M. Alles, L. Sternberg, A. F. Witulski, B. E.
Templeton, M. A. Xapsos, K. A. LaBel, J. H. Adams, J. W. Watts “Geant4
and the Vanderbilt Radiation Effects Simulation Strategy, RADSAFE,”
presented at Geant4 Space Users Workshop, Pasadena, CA, 2006.
J. A. Pellish, R. Reed, M. Alles, R. Schrimpf, M. Varadharajaperumal,
G. Niu, A. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan,
J. Comeau, J. Cressler, G. Vizkelethy, P. Marshall, R. Weller, M.
Mendenhall, and E. Montes, “Monte Carlo modeling of proton events
in deep trench isolation technologies using the combined capabilities
of MRED and TCAD,” presented at the Single Event Effects Symposium,
Long Beach, CA, 2006.
E. J. Montes, R. A. Reed, J. A. Pellish, M. L. Alles, R. D. Schrimpf,
R. A. Weller, M. Varadharajaperumal, G. Niu, A. K. Sutton, R.
Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J. D. Cressler,
G. Vizkelethy, and P. W. Marshall, “Single Event Effects Modeling in
Silicon Germanium HBTs,” presented at the Single Event Effects
Symposium, Long Beach, CA, 2006.
R. A. Reed, R. A. Weller, R. D. Schrimpf, L. W. Massengill, M. H.
Mendenhall K. M. Warren D. R. Ball, J. A. Pellish B. D. Sierawski C. L.
Howe, M. Alles, A. L. Sternberg A. F. Witulski A. D. Tipton, M. A.
Xapsos, K. A. LaBel, “RADSAFE Development and Applications
Overview”, presented at the Single Event Effects Symposium, Long Beach,
CA, 2006. (invited)
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